Home
For authors
Submission status

Current
Archive (English)
Archive
   Volumes 81-92
   Volumes 41-60
   Volumes 21-40
   Volumes 1-20
   Volumes 61-80
      Volume 80
      Volume 79
      Volume 78
      Volume 77
      Volume 76
      Volume 75
      Volume 74
      Volume 73
      Volume 72
      Volume 71
      Volume 70
      Volume 69
      Volume 68
      Volume 67
      Volume 66
      Volume 65
      Volume 64
      Volume 63
      Volume 62
      Volume 61
Search
VOLUME 69 | ISSUE 3 | PAGE 236
Suppression of the equilibrium tunneling current between slightly disordered two-dimensional electron systems with different electron concentrations in a high magnetic field
PACS: 73.20.Dx, 73.40.Gx
Tunnelling between parallel two-dimensional electron gases (2DEG) in accumulation layers formed on both sides of the single doped AlGaAs barrier are examined in both zero and high magnetic field. Accumulation layers are separated from highly η-doped contact regions which freely supply electrons to the 2DEGs via 80 nm thick lightly η-doped spacer layers. Strongly oscillating current with magnetic field along the 2DEG's is absent in this arrangement. Without magnetic field resonant tunneling between 2DEGs with different as grown electron concentration could be settle by application of external voltage bias. High magnetic fields (u < 1) shift resonant tunnelling to zero external bias and suppresses tunnelling current, creating wide gap in the tunneling density of states at the Fermi level arisen from the in-plane Coulomb interaction in the 2DEGs.