The tunnel current oscillations in a GaAs/AlAs double-barrier heterostructure
Belyaev A.E., Vitusevich S.A., Konakova R.V., Figielski ô., Makosa A., Wosinski ô., Kravchenko L.N.
A fine structure (oscillations) of tunnel current in resonant-tunneling double-barrier quantum heterostructures based on AlAs/GaAs/AlAs with a wide spacer layer was observed. The oscillations have a period that close to where Λωχ,ο is the longitudinal optic phonon energy in GaAs. To explain similar LO phonon-related oscillatory structure in the tunneling devices the model was suggested according to which carriers injected from n+ -emitter lose energy gained in a strong electric field by the emission of LO phonons whether in the accumulation layer on the emitter side or in the depletion region adjacent to collector barrier in dependence on where the spacer layer is designed on.