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VOLUME 112 | ISSUE 2 | PAGE 112
High thermal conductivity of bulk GaN single crystal: n accurate experimental determination
Abstract
Thermal conductivity κ (T) of bulk single crystal GaN having wurtzite crystal structure has been measured in the direction parallel to the hexagonal plane at temperatures T between 5 and 410 K. The room temperature value of thermal conductivity is equal to 213\pm 7 W m-1 K-1. The κ (T) reaches a peak of about 3770 W m-1 K-1 at T\approx 28 K. The high value of κ(T) at low temperatures indicates high quality of the sample under study. The lowest-temperature results can be very satisfactory explained by McCurdy, Maris, and Elbaum theory of phonon transport in the diffuse boundary scattering regime. Above the peak, the measured κ (T) decreases steeply even at high temperatures. The discrepancies between our experimental results and recent first-principles calculations are discussed.