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VOLUME 108 | ISSUE 1 | PAGE 24
Effect of magnetic field on the nano-hardness of monocrystalline silicon and its mechanism
Abstract
The purpose of this work is to investigate the effect of magnetic field on the nano-hardness of monocrystalline silicon doped with phosphorous by ion implantation. It is found that a magnetic field of certain parameters can increase the nano-hardness of monocrystalline silicon doped with phosphorous by ion implantation, and this increase can be eliminated by annealing monocrystalline silicon doped with phosphorous by ion implantation at 800 °C for 780 s. For the monocrystalline silicon doped with phosphorous by ion implantations that have not been exposed to a magnetic field, annealing them at 800 ° for 780 s cannot affect their nano-hardness, but exposing them to the magnetic field mentioned previously can no longer affect their nano-hardness after annealing. The mechanism of all these phenomena is discussed, a possible mechanism that a magnetic field can promote the disbanding of vacancy clusters, and a possible mechanism of magnetically stimulated clusters' disbanding and magnetoplastic effect are put forward.