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VOLUME 95 | ISSUE 11 | PAGE 653
Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well
F. J. R. Schülein, J. Pustiowski, K. Müller×, M. Bichler×, G. Koblmüller×, J. J. Finley×, A. Wixforth, H. J. Krenner

Lehrstuhl für Experimentalphysik 1 and Augsburg Centre for Innovative Technologies (ACIT), Universität Augsburg, 86159 Augsburg, Germany
Center for NanoScience CeNS, 80539 München, Germany
×Walter Schottky Institut and Physik Department, Technische Universität München, 85748 Garching, Germany

Abstract
We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modulation from one maximum to two maxima per SAW cycle as the acoustic power is increased which we find in good agreement with numerical calculations of the SAW controlled carrier dynamics. At low acoustic powers the carrier mobilites limit electron-hole pair dissociation, whereas at high power levels the induced electric fields give rise to efficient acousto-electric carrier transport. The direct comparison between the experimental data and the numerical simulations provide an absolute calibration of the local SAW phase.


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