Home
For authors
Submission status

Archive
Archive (English)
Current
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 94 | ISSUE 12 | PAGE 934
Influence of electron localization on the spin dephasing anisotropy in bias GaAs/AlGaAs coupled quantum wells
A. V. Sekretenko, A. V. Larionov

Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia

Abstract
Electron spin dephasing anisotropy is studied in GaAs/AlGaAs coupled quantum wells by means of a time-resolved Kerr rotation technique. It is found that the spin dephasing rate is strongly dependent on magnetic field and is significantly anisotropic in the quantum well plane. The presented theoretical model describes the experimental results by taking into account both the electron g-factor spreading and the irreversible electron spin relaxation which are caused by the electron localisation. The suggested theoretical description is in a good agreement with experimental data.


Download PS file (GZipped, 397.6K)  |  Download PDF file (312.3K)


Список работ, цитирующих данную статью, см. здесь.

List of articles citing this article can be found here.