Home
For authors
Submission status

Archive
Archive (English)
Current
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 94 | ISSUE 2 | PAGE 146
Nature of the electronic states involved in the chemical bonding and superconductivity at high pressure in SnO
J. A. McLeod+, A. V. Lukoyanov*,**, E. Z. Kurmaev*, L. D. Finkelstein*, A. Moewes+
+Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon,
Saskatchewan S7N 5E2, Canada
*Institute of Metal Physics, Russian Academy of Sciences, Ural Division, 620990 Yekaterinburg, Russia
**Ural Federal University, 620002 Yekaterinburg, Russia

Abstract
We have investigated the electronic structure and the Fermi surface of SnO using density functional theory (DFT) calculations within recently proposed exchange-correlation potential (PBE+mBJ) at ambient conditions and high pressures up to 19.3 GPa where superconductivity was observed. It was found that the Sn valence states (5s, 5p, and 5d) are strongly hybridized with the O 2p-states, and that our DFT-calculations are in good agreement with O K-edge X-ray spectroscopy measurements for both occupied and empty states. It was demonstrated that the metallic states appearing under pressure in the semiconducting gap stem due to the transformation of the weakly hybridized O 2p-Sn 5sp subband corresponding to the lowest valence state of Sn in SnO. We discuss the nature of the electronic states involved in chemical bonding and formation of the hole and electron pockets with nesting as a possible way to superconductivity.


Download PS file (GZipped, 589.9K)  |  Download PDF file (432K)


Список работ, цитирующих данную статью, см. здесь.

List of articles citing this article can be found here.