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VOLUME 92 | ISSUE 12 | PAGE 872
Tunneling Hall Effect
P. S. Alekseev

Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia

Abstract
Electron tunneling in a semiconductor heterostructure with a barrier in a weak magnetic field applied parallel to the barrier interfaces is analyzed theoretically. A novel mechanism of the Hall effect in this structure is suggested. It is shown that the Hall current in the vicinity of the wide enough barrier is determined by the orbital effect of the magnetic field on the electron motion under the barrier, rather than by the electron \vec{\cal E}\times \vec{\cal H}-drift and scattering in the conductive regions lying to the left and to the right of the barrier.


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