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VOLUME 86 | ISSUE 9 | PAGE 687
Determination of Landau's Fermi-liquid parameters in Si-MOSFET systems
A. Gold, V. T. Dolgopolov+
Centre d`Elaboration de Matériaux et d`Etudes Structurales (CEMES-CNRS), 31055 Toulouse, France
+Institute of Solid State Physics, 142432 Chernogolovka, Moscow District, Russia


PACS: 71.10.Ay, 72.10.-d, 73.20.-r
Abstract
We analyze experimental data in order to evaluate Landau's Fermi-liquid parameters. By using row data of recent Shubnikov -de Haas measurements we derive, as function of the electron density ns, results for the compressibility mass of the charged two-dimensional electron gas. The compressibility mass is nearly equal to the transport mass even in the density region where the transport mass has the tendency to diverge. We conclude that Landau's Fermi-liquid parameter F0s(ns) is nearly independent of electron density and near to zero. This result is derived for silicon (100) and silicon (111) surfaces. We also obtain the dependence of F1s(ns), determining the transport mass, and of F0a(ns), determining the spin-susceptibility.


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