Effect of magnetization fluctuations on exciton trapping in Cd1-x MnxTe semimagnetic semiconductors
Bukivskii P. N. , Gnatenko Yu. P. , Rozhko A. Kh.
It is shown, in the particular case of Cd0 873Mn0127Te crystals, that the emission lineshape of trapped excitons (the M°X line) for semimagnetic semiconductors corresponds to emission of excitons trapped by both fluctuations of the crystal-field potential and fluctuations of the magnetization of the crystal. The magnetization fluctuations essentially determine the emission at ç=1.8 K. This emission component stems from the presence of local internal magnetic fields in these crystals at temperatures near the phase transition to a spin-glass state.© 1995 American Institute of Physics.