Kinetics of photocrystallization and Raman scattering in the bulk amorphous semiconductor GaSb
Denisov V. N. , Mavrin B. N., Podobedov V. B. , Skrotskaya G. G.
A photocrystallization of the bulk amorphous semiconductor α-GaSb has been detected on the basis of the Raman spectra. The threshold densities have been determined. The behavior of the photocrystallization as a function of the illumination time and the length of the exciting pulses has been studied.