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VOLUME 50 | ISSUE 1 | PAGE 41
Effect of anisotropy of epitaxial YBa2Cu30x films on tunneling properties of YBa2Cu3Ox-metal junctions
"Planar" and "edge" tunnel junctions based on epitaxial YBa2Cu3(\ films have been studied. The differences in the current-voltage characteristics of the contacts and the structural features on these characteristics are linked with an anisotropy of the state density N(e) and the existence of a narrow peak in N(e) near the Fermi level in the Cu-O plane. A change in the YB2Cu3Ox state density has been observed at T~ 30 K.




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