Light scattering by optical phonons trapped in AlAs layer in (GaAs)m(AlAs)n superlattice
Bairamov B.Kh., Gant T. A. , Delaney M. , Kitaev Yu. E., Klein M. V., Levi D., Morkog H., Evarestov R. A.
A Raman scattering by LO phonons trapped within an AlAs layer in a (GaAs) m (Al As) „ (m = 7, η = 18) superlattice has been observed. When specific atoms (Ga, Al, As) were put in Wyckoif positions, it was found that the contributions of the displacements of these atoms to vibrations of a certain symmetry Γ,, Γ2, ç5 depends on m and n. It thus becomes possible to extract information about the microstructure and the quality of the superlattices within a single monolayer.