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VOLUME 82 | ISSUE 5 | PAGE 331
Effects of electron-phonon interaction in tunneling processes in nanostructures
P. I. Arseyev, N. S. Maslova^\dag,

P.N.Lebedev Physical Institute RAS, 119991 Moscow, Russia
^\dagDepartment of Physics, Moscow State University, 119992 Moscow, Russia


PACS: 73.40.Gk, 73.63.-b
Abstract
Tunneling through a system with two discrete electron levels coupled by electron-phonon interaction is considered. The interplay between elastic and inelastic tunneling channels is analyzed not only for weak electron-phonon coupling but also for strong coupling in resonant case. It is shown that intensity and width of peaks in tunneling conductivity is strongly influenced by non equilibrium effects.


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